vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 1 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 940 nm, surface emitter technology description as part of the surflight tm portfolio, the vsmy3940x01 is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a plcc-2 package for surface mounting (smd). features ? package type: surface mount ? package form: plcc-2 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? aec-q101 qualified ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 60 ? suitable for high pulse current operation ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free re flow soldering ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 released for applications infrared radiation source for operation with cmos cameras (illumination) ? high speed ir data transmission ? ir touch panels ?3d tv ?light curtain note ? test conditions see table basic characteristics note ? moq: minimum order quantity 948553 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) vsmy3940x01 15 60 940 10 ordering information ordering code packaging remarks package form VSMY3940X01-GS08 tape and reel mo q: 7500 pcs, 1500 pcs/reel plcc-2 vsmy3940x01-gs18 tape and reel mo q: 8000 pcs, 8000 pcs/reel plcc-2
vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 2 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma pulse peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissi pation p v 190 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature acc. figure 10, j-std-020 t sd 260 c thermal resistance junction/amb ient j-std-051, soldered on pcb r thja 250 k/w 0 20 40 60 80 100 120 140 160 180 200 0 20406080100 p v -power di ss ipation (mw) t amb - ambient temperature ( c) r thja = 250 k/w 0 20 40 60 80 100 120 0 20406080100 i f - forward current (ma) t amb - ambient temperature ( c) r thja = 250 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.44 1.9 v i f = 1 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 100 ma tk vf -1.6 mv/k reverse current i r not designed for reverse operation a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 81524mw/sr i f = 1 a, t p = 100 s i e 120 mw/sr radiant power i f = 100 ma, t p = 20 ms e 55 mw temperature coefficient of e i f = 100 ma tk e -0.25 %/k angle of half intensity ? 60 deg peak wavelength i f = 20 ma p 920 940 960 nm spectral bandwidth i f = 30 ma ? 40 nm temperature coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 10 ns fall time i f = 100 ma t f 10 ns
vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 3 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - forward voltage vs. ambient temperature fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - relative radiant in tensity vs. ambient temperature fig. 8 - relative radian t intensity vs. wavelength 1 10 100 1000 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i f - forward current (ma) v f - forward voltage (v) t p = 100 s 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 -60 -40 -20 0 20 40 60 80 100 v f - forward voltage (v) t amb - ambient temperature ( c) i f = 100 ma t p = 20 m s 90 95 100 105 110 115 -60 -40 -20 0 20 40 60 80 100 v f, rel - relative forward voltage (%) t amb - ambient temperature ( c) i f = 100 ma t p = 20 m s 0.1 1 10 100 1000 1 10 100 1000 i e - radiant inten s ity (mw/ s r) i f - forward current (ma) t p = 100 s 80 90 100 110 120 -60 -40 -20 0 20 40 60 80 100 i e, rel - relative radiant inten s ity (%) t amb - ambient temperature ( c) i f = 100 ma t p = 20 m s 0 10 20 30 40 50 60 70 80 90 100 800 850 900 950 1000 1050 i e, rel - relative radiant inten s ity (%) - wavelength (nm) i f = 20 ma
vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 4 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - relative radiant intensity vs. angular displacement package dimensions in millimeters i e, rel - relative radiant inten s ity 0.6 80 0 0.7 0.4 0.2 0 30 70 60 50 40 10 20 1.0 0.9 0.8 ? - angular di s placement mounting pad layout 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist drawing-no.: 6.541-5067.02-4 issue: 4; 19.07.10 20767 technical drawings according to din specifications pin identification 2.8 0.15 1.75 0.1 2.2 0.9 3.5 0.2 3 + 0.15 ? 2.4 ac
vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 5 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 10 - lead (pb)-free refl ow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 3, acc. to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. tape and reel plcc-2 components are packed in antistatic blister tape (din iec (co) 564) for automatic component insertion. cavities of blister tape are covered with adhesive tape. fig. 11 - blister tape fig. 12 - tape dimens ions in mm for plcc-2 missing devices a maximum of 0.5 % of the to tal number of components per reel may be missing, exclusiv ely missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. fig. 13 - beginning and end of reel the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. the tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. the least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. fig. 14 - dimensions of reel-gs08 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158 180 178 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 identification label: vishay type group tape code production code quantity
vsmy3940x01 www.vishay.com vishay semiconductors rev. 1.2, 25-jun-14 6 document number: 84220 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - dimens ions of reel-gs18 cover tape removal force the removal force lies between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with re gard to the feed direction. 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8.4 120 18857 label: vishay type group tape code production code quantity
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